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S-L2SA1365FLT3G Datasheet, Transistor, Leshan Radio Company

S-L2SA1365FLT3G Datasheet, Transistor, Leshan Radio Company

S-L2SA1365FLT3G

datasheet Download (Size : 677.20KB)

S-L2SA1365FLT3G Datasheet
S-L2SA1365FLT3G

datasheet Download (Size : 677.20KB)

S-L2SA1365FLT3G Datasheet

S-L2SA1365FLT3G Application

S-L2SA1365FLT3G Application

Requiring Unique Site and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable. L2SA1365*LT1G S-L2SA1365*LT.

S-L2SA1365FLT3G Description

S-L2SA1365FLT3G Description

L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE
*Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
*Excellent linearity of DC forward current g.

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TAGS

S-L2SA1365FLT3G
General
Purpose
Transistor
Leshan Radio Company

Manufacturer


Leshan Radio Company

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